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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.5: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

Adsorption Characteristics of Gallium on Si(112) — •Inga Heidmann, Moritz Speckmann, Thomas Schmidt, and Jens Falta — Institute for Solid State Physics, University of Bremen, 28359 Bremen

We studied the morphology of the clean and gallium-terminated Si(112) surface by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The Si(112) surface is of great interest for technological applications due to the fact that the clean surface is faceted [1], and the deposition of Ga atoms at the step edges of vicinal surfaces is favoured energetically. This leads to a self-organized formation of quasi one-dimensional atomic wires along the direction of the wires [2].

Our investigations on the bare surface showed two different typs of regions, one exhibiting stepped Si(112) surface areas and the other consisting of (111)-(7 × 7)- and (337)-(2 × 1)-facets orientated along the [110] direction. Due to the adsorption of gallium the surface is smoothened and large-area (112)-orientated domains are established with a (N × 1)-reconstruction, where N=4−7 with an averaged value of roughly 5.5. The Ga atoms are arranged in rows parallel to the [110] direction, but are interrupted by perpendicular quasiperiodic vacancy lines.
: Baski et al., Phys. Rev. Lett. 74(6), 1995.
: Snijders et al., Phys. Rev. B 72, 2005.