Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.6: Poster
Dienstag, 23. März 2010, 18:30–21:00, Poster B1
Aluminium induced facetting of Si(113) studied by SPA-LEED and AFM — Inga Heidmann1, •Moritz Speckmann1, Tobias Nabbefeld2, Claudius Klein2, Michael Horn-von Hoegen2, and Jens Falta1 — 1Institute of Solid State Physics, University of Bremen, 28359 Bremen — 2Experimental Physics, University of Duisburg-Essen, 47057 Duisburg
Due to its anisotropy and lack of rotational symmetry the Si(113) surface is a candidate for the growth of low dimensional structures like nanowires. Though it is one of a very few stable high-index silicon surfaces, Si(113) appears to be unstable against facetting after adsorption of metals, e.g., Ga [1,2] or Ag [3].
By means of spot profile analysing low-energy electron diffraction (SPA-LEED) and atomic force microscopy (AFM) we analysed the Al adsorption on Si(113) in a temperature range of 600 to 800∘C in dependence on both, the deposition temperature and deposition time. We find that Al, very similar to the adsorption of Ga, decomposes the Si(113) surface into a regular facet pattern along the [110] direction. This pattern consists of alternating (112) and (115) facets, which are (6×1) and (4×1) reconstructed, respectively. The width of the facets increases strongly with increasing deposition temperature. For temperatures above 750∘C, however, only the (112) facets are found to be stable.
: H. Suzuki et al., Surf. Sci. 492, 166 (2001).
: T. Clausen et al., e-J. Surf. Sci. Nanotech. 3, 379 (2005).
: M. Speckmann et al., Phys. Status Solidi RRL 3, 305 (2009).