Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.83: Poster
Dienstag, 23. März 2010, 18:30–21:00, Poster B1
Electronic structure of RScO3 from x-ray spectroscopies and first–principles calculations — •Christine Derks1, Karsten Kuepper2, Michael Raekers1, Andree Postnikov3, Reinhard Uecker4, and Manfred Neumann1 — 1Department of Physics, University of Osnabrück, D-49069 Osnabrück — 2Departement of Solidstate Physics, Univeristy of Ulm, D-89069 Ulm — 3Laboratoire de Physique des Milieux Denses, Universite Paul Verlaine, F-57078 Metz — 4Institute for Crystal Growth, D-12489 Berlin
Perovskites of the type RScO3, where R represents a trivalent rare-earth metal, exhibit an enormous variety of physical properties and can be used for different applications. They are high k materials and belong to the best available thin film substrates for the epitaxial growth of high quality thin films. This allows a so called strain tailoring of ferroelectric, ferromagnetic, or multiferroic perovskite thin films by choosing different RScO3.
The electronic structures of a series of RScO3 single crystalls are investigated by means of x-ray photoelectron spectroscopy (XPS), x-ray emission spectroscopy (XES), x-ray absorption spectroscopy (XAS) and band structure calculations. By combining XES and XAS measurements together with theoretical calculations the band gaps of the compounds can be accurately determined. The presented results will broaden the complete experimental and theoretical picture of the valence bands of RScO3 series.