Regensburg 2010 – scientific programme

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.89: Poster

Tuesday, March 23, 2010, 18:30–21:00, Poster B1

A Study of band-gap-engineering in ZrS₂Se_2−x by means of ARPES — •Alexander Paulheim, Stephan Thürmer, Mohamed Moustafa, Christoph Janowitz, and Recardo Manzke — Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, Germany

The layered Zirconium dichalcogenide semiconductors ZrS₂Se_2−x allow to adjust the band gap depending on the parameter x [1]. Therefore, they are candidates for third generation solar cell applications. The ternary compounds of ZrS_xSe_2−x have been successfully grown with high control of the parameter x by means of the chemical vapor transport technique (CVT) [2]. In an attempt to understand the mechanism of this band-gap-engineering and the underlying band structure variations, the electronic structure of various ZrS_xSe_2−x crystals were measured by angle resolved photoemission spectroscopy (ARPES). In great detail the x-dependent behavior of the upper valence band has been studied along all high-symmetric directions of the Brillouin zone. The results reveal a smooth transition of the energetic positions and splitting of the bands from ZrS₂ to ZrSe₂.