Regensburg 2010 – scientific programme

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.91: Poster

Tuesday, March 23, 2010, 18:30–21:00, Poster B1

Electron-Phonon Coupling in a Thin Epitaxial Bi(111) Film on Si(111) studied by ARPES — •Holger Schwab, Hendrik Bentmann, Frank Forster, and Friedrich Reinert — Universität Würzburg, Experimentelle Physik VII, Am Hubland, D-97074 Würzburg, Germany

Employing angle-resolved photoelectron spectroscopy (ARPES) we have studied the electronic structure in thin films of Bi(111) on the Si(111) substrate. The film growth was characterized by low energy electron diffraction (LEED). We present Fermi surfaces and band structures in the high symmetry directions for different film thicknesses. Quantum well states (QWS) as well as the Bi(111) surface state (SS) are observed. The variation of the line width of the SS was measured over a broad temperature range from 40K to 200K. This allows for the determination of the electron-phonon coupling constant λ. The result agrees with previous measurements for the bulk crystal.