Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.99: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

Energy Dissipation in Dynamic Force Microscopy: The Effect of Temperature — •Gernot Langewisch, Harald Fuchs, and Andre Schirmeisen — CeNTech (Center for Nanotechnology) and Institute of Physics, University of Muenster, Germany

Since its development dynamic force microscopy has proven to be a powerful tool for surface imaging and mapping of tip-sample interactions down to the atomic scale. Conservative as well as dissipative tip-sample forces can be distinguished by dynamic force spectroscopy. Conservative tip-sample forces have been readily described by classical force laws. The exact origin of the dissipative forces is still under discussion, but current theories predict an explicit temperature dependence of the energy dissipation. Therefore, we performed systematic temperature dependent studies to better understand the interaction processes leading to dissipation in dynamic force microscopy. The dissipative tip-sample interactions were measured by dynamic force spectroscopy for silicon tips on NaCl(001) in ultrahigh vacuum in the attractive and repulsive force regimes. Force and dissipation versus distance curves were obtained for different surface temperatures ranging from 35 K to room temperature. Detailed comparison in different distance regimes shows that neither the force nor energy dissipation exhibits a systematic variation with sample temperature.