Regensburg 2010 – scientific programme

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O: Fachverband Oberflächenphysik

O 49: Surface chemical reactions I

O 49.1: Talk

Wednesday, March 24, 2010, 10:30–10:45, H42

Temperature programmed desorption from surfaces of elec- tronic devices — Andreas Peckhaus, Kevin Stella, •Detlef Diesing, and Eckart Hasselbrink — Institut für Physikalische Chemie, Universität Duisburg Essen

Surface chemical reactions depend crucially on the cleanliness and morphology of the surface. Usual cleaning procedures as sputtering and annealing can be well applied to single crystal surfaces. But thin film electronic devices can be hardly exposed to such kind of proce- dures since either the thermal stability of the devices is too low or the devices internal interfaces may be damaged be sputtering ions. We present first experiments on temperature programmed desorption of CO on the platinum surface of thin film platinum-silicon oxide-(n- type)-silicon devices. Problems as damages in the platinum films due to electromigration and degradation of the oxide films in the high tem- perature range > 600 K are discussed. We show that heating rates up to 3 K/s from 150 K to 600 K can be established with reproducible desorption peaks indicating an activation energy of desorption of 90 - 120 kJ/mol for CO adsorbed on the device surface.