Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 49: Surface chemical reactions I
O 49.2: Vortrag
Mittwoch, 24. März 2010, 10:45–11:00, H42
Functionalization of AlGaN/GaN heterostructures with TFAAD — •Stefan Udo Schwarz1, Volker Cimalla2, Christoph Nebel2, and Oliver Ambacher2 — 1Institute of Microsystem Technology (IMTEK), University of Freiburg, Georges-Köhler-Allee 106, 79110 Freiburg, Germany — 2Fraunhofer Institute for Applied Solid State Physics, Tullastraße 72, 79108 Freiburg, Germany
AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this principle. The transduction is based on the AlGaN/GaN heterostructure. Charges on its surface influence the electron density in the 2-dimensional electron gas (2DEG) near the interface of the heterostructure. For a specific sensor, biological recognition methods shall be used. Therefore biomolecules need to be covalently linked to the semiconductor. The surface must be functionalized with a single layer of molecules that form covalent bonds to the surface and present functional groups for the connection with the biomolecule. In this work we investigate the functionalization of AlGaN/GaN heterostructures with 10-Trifluoroacetamiddec-1-ene (TFAAD), a molecule that can bond to GaN in a photochemical reaction and has a protected Amino group for the further procedure. The focus is on the influence of the illumination spectrum and surface pretreatments on the reaction kinetics and the resulting layer morphology with respect to the designated application.