Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 52: Graphene II

O 52.3: Vortrag

Mittwoch, 24. März 2010, 15:30–15:45, H31

SPM on epitaxial graphene on SiC — •Markus Duschl and Franz J. Giessibl — Insitute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg

For some years, graphene has been of wide interest due to its extraordinary properties. First measurements done on exfoliated graphene in ambient conditions indicate that it might be possible to determine the number of graphite layers by force spectroscopy [1]. The stiffness increases with a decreasing number of layers, down to graphene. We compare these measurements to data taken with a combined STM and AFM in UHV at room temperature on epitaxial graphene grown on SiC [2].

[1] Hiermaier, V. Diploma Thesis, July 2009

[2] Seyller, T. et al. Nature Mater. 8, 203-207 (2009)