O 52: Graphene II
Wednesday, March 24, 2010, 15:00–17:15, H31
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15:00 |
O 52.1 |
Direct writing of 1 nm thin graphenoid nanoribbons and nanosieves — •Mark Schnietz, Andrey Turchanin, Christoph Nottbohm, André Beyer, Harun Solak, Peter Hinze, Thomas Weimann, and Armin Gölzhäuser
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15:15 |
O 52.2 |
Decoupling epitaxial graphene from SiC(0001) surface by a germanium buffer layer — •Konstantin Emtsev and Ulrich Starke
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15:30 |
O 52.3 |
SPM on epitaxial graphene on SiC — •Markus Duschl and Franz J. Giessibl
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15:45 |
O 52.4 |
Defect-induced electron scattering and metal-insulator transition in graphene — Aaron Bostwick, Jessica McChesney, Konstantin Emtsev, Thomas Seyller, •Karsten Horn, Stephen D. Kevan, and Eli Rotenberg
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16:00 |
O 52.5 |
Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation — •Camilla Coletti, Christian Riedl, Takayuki Iwasaki, Alexei A. Zakharov, and Ulrich Starke
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16:15 |
O 52.6 |
X-ray absorption and magnetic circular dichroism of graphene/Ni(111) — Martin Weser, Yvonne Rehder, Karsten Horn, Muriel Sicot, Mikhail Fonin, Aleksej Preobrajenski, Elena Voloshina, and •Yuriy Dedkov
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16:30 |
O 52.7 |
An ab initio study of graphenen nanoribbons doped with boron clusters — Cem Özdogan, •Jens Kunstmann, Alexander Quandt, and Holger Fehske
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16:45 |
O 52.8 |
Effect of Noble-Metal Contacts on the Electronic Structure of Graphene — •Andrei Varykhalov, Markus R. Scholz, Timur K. Kim, and Oliver Rader
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17:00 |
O 52.9 |
Resonant Raman scattering of chemically functionalized graphene — •Nils Scheuschner, Dimitrios Tasis, Kostas Papagelis, and Janina Maultzsch
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