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Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 59: Poster Session II (Nanostructures at surfaces: Dots, particles, clusters; Nanostructures at surfaces: arrays; Nanostructures at surfaces: Wires, tubes; Nanostructures at surfaces: Other; Plasmonics and nanooptics; Metal substrates: Epitaxy and growth; Metal substrates: Solid-liquid interfaces; Metal substrates: Adsoprtion of organic / bio molecules; Metal substrates: Adsoprtion of inorganic molecules; Metal substrates: Adsoprtion of O and/or H; Metal substrates: Clean surfaces; Density functional theory and beyond for real materials)

O 59.52: Poster

Mittwoch, 24. März 2010, 17:45–20:30, Poster B1

Signal-to-background ratio in scattering-type Scanning Near-Field Microscopy (s-SNOM) — •Jón Mattis Hoffmann1, Jon Schuller2, Mark Brongersma2, Stefanie Bensmann3, and Thomas Taubner1,31I. Physikalisches Institut (IA), RWTH Aachen — 2Stanford University — 3Fraunhofer-Institut für Lasertechnik

The scattering-type Scanning Near-Field Optical Microscopy (s-SNOM) surpasses the diffraction-limit and provides the possibility of non-destructive microscopy and the analysis of material properties at the nanometer scale [1]. This allows, for example, the identification of different polymers [2] or the analysis of viruses [3]. Furthermore, the combination of s-SNOM with a broadband light source gives the possibility to record a full spectrum with a single measurement [4].

One limiting factor of the s-SNOM is the signal-to-background ratio. This is getting more crucial for the probing of weakly-absorbing samples and especially for the the use of broadband lasers, which offer less power. In our current research project, the possibility of increasing the sensitivity of s-SNOM by using resonant probing-tips will be worked out. Therefore, as a first step, commercially available tips will be characterized with respect to their scattering properties, in the far-field and the near-field.

[1] F. Keilmann et al., Phil. Trans. R. Soc. Lond. A, 787 (2004)

[2] T. Taubner et al., Appl. Phys. Lett. 85, (2004)

[3] M. Brehm et al., Nano Lett. 6, 1307-1310 (2006)

[4] S. Amarie et al., Opt. Express 17, 21794-21801 (2009)

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