Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 60: Poster Session III (Methods: Atomic and electronic structure; Methods: electronic structure theory; Methods: Molecular simulations and statistical mechanics; Methods: Sanning probe techniques; Methods: other (experimental); Methods: other (theory) )

O 60.17: Poster

Mittwoch, 24. März 2010, 17:45–20:30, Poster B2

A Dynamic Force and Scanning Tunneling Microscopy Study of Line Defects and Step Edges in the Alumina Film on NiAl(110) — •Lars Heinke, Leonid Lichtenstein, Georg Hermann Simon, Thomas König, Markus Heyde, and Hans-Joachim Freund — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14196 Berlin, Germany

The aluminum oxide thin film on NiAl(110) is an often used model system in catalysis. Line defects in the film like step edges and antiphase domain boundaries are prominent structure elements and they are referred to as active sites [1]. In this study, frequency modulation dynamic force microscopy (FM-DFM) and scanning tunneling microscopy (STM) are applied to determine the atomic structure of the thin film and its line defects in ultra high vacuum at 5 K [2]. By means of bias spectroscopy and contact potential measurement different density of electronic states as well as the electrostatic potential were determined. We would like to link the electronic structure of the line defects to catalytic processes.

[1] S. Schauermann et al., Chem. Phys. Lett. 381 (2003) 298-305

[2] G. H. Simon et al., New J. Phys. 11 (2009), 093009