Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 60: Poster Session III (Methods: Atomic and electronic structure; Methods: electronic structure theory; Methods: Molecular simulations and statistical mechanics; Methods: Sanning probe techniques; Methods: other (experimental); Methods: other (theory) )
O 60.21: Poster
Wednesday, March 24, 2010, 17:45–20:30, Poster B2
Infrared near-field nanospectroscopy of SiO2 structures embedded at Si[100] surfaces — Marc Tobias Wenzel1, •Hans-Georg von Ribbeck1, Anja Krysztofinski1, Phillip Olk1, Andreas Hille1, Oliver Mieth1, Peter Milde1, Lukas M. Eng1, Rainer Jacob2, and Manfred Helm2 — 1Institut für Angewandte Photophysik, TU Dresden, George-Bähr-Straße 1, 01069 Dresden — 2Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, 01214 Dresden
Scattering scanning near-field optical microscopy (s-SNOM, or s-NSOM) allows for optical inspection of nanostructures and materials with a resolution far better than the diffraction-limited resolution of far-field microscopy methods. This is of particular interest in case of mid-infrared investigations. The combination of such an s-SNOM with the wavelength-tunable free-electron laser (FEL) located at the Forschungszentrum Dresden-Rossendorf provides a versatile tool for the nondestructive sample investigation in the IR fingerprint region at nanoscopic resolution.
Here, we present the IR-s-SNOM nanospectroscopy investigations of 400-nm-deep SiO2 trenches, embedded in intrinsic silicon [100]. Measurements were performed in the wavelength range from 9 to 11 µm (1100 cm−1to 910 cm−1). We experimentally demonstrate the expected contrast reversal of the near-field amplitude signals of Si and SiO2. This contrast reversal is due to the material-specific near-field enhancement at the reststrahlen band of SiO2. We also present comparative measurements using a CO2 laser at 10.6 µm (943 cm−1).