Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 60: Poster Session III (Methods: Atomic and electronic structure; Methods: electronic structure theory; Methods: Molecular simulations and statistical mechanics; Methods: Sanning probe techniques; Methods: other (experimental); Methods: other (theory) )
O 60.25: Poster
Wednesday, March 24, 2010, 17:45–20:30, Poster B2
Near-field infrared microscopy with a broadband light source — •Stefanie Bensmann1, Christoph Janzen1, Reinhard Noll1, Jón Mattis Hoffmann2, and Thomas Taubner1,2 — 1Fraunhofer-Institut für Lasertechnik (ILT), Aachen — 2I. Physikalisches Institut IA, RWTH Aachen
Scattering-type near-field infrared microscopy offers a wavelength-independent spatial resolution of approximately 30 nm together with chemical sensitivity [1]. Spectra are usually recorded by consecutive measurements that are performed at different wavelengths, which is time-consuming. Additionally, the limited spectral range covered by conventional MIR laser sources does not cover samples like e.g. certain semiconductors (GaAs), polar crystals and different polymers.
Broadband IR light sources allow circumventing these problems by recording a full spectrum with a single measurement in an extended frequency range [2,3]. However, a laser power of only a few µ W restricts measurements to samples with a strong resonance like SiC. We present work on combining a broadband IR laser (power of several mW at 5−12 µ m) that is currently developed at the ILT with the NeaSNOM (near-field optical microscope from Neaspec, www2.neaspec.com). This new system will extend the spectral range covered and allow to examine samples with weaker resonances.
[1] F. Keilmann, R. Hillenbrand, in: Nano-optics and Near-field Optical Microscopy, p. 235; X. Zhang, K. Wang (eds), Artech House 2009.
[2] M. Brehm et al., Optics Express 15, p. 11222, 2006.
[3] S. Amarie et al., Optics Express 17, p. 21794, 2009.