Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 64: Solid/liquid interfaces I (focussed session)
O 64.2: Hauptvortrag
Donnerstag, 25. März 2010, 11:00–11:30, H33
Copper Damascene Process: From the wafer to the atomic scale — •Alexander Flügel1, Dieter Mayer1, Werner Reckien3, Thomas Bredow3, N.T.M. Hai2, and Peter Broekmann2 — 1BASF SE, Ludwigshafen — 2University of Bern — 3University of Bonn
Copper plating is one of the key processing steps in the state-of-the-art fabrication of high-end microprocessors. The internal wiring of highly integrated circuits is achieved by an electrochemical copper deposition route also known as Copper (Dual) Damascene Process. Trenches and vias in the dielectric are filled defect-free with the copper material due to an enhanced deposition rate at the feature bottom with respect to a suppressed deposition rate at the wafer surface. This non-uniform deposition rate is triggered by the time-dependent interplay of various inorganic and organic additives at the copper surface or the near-surface regime upon electrodeposition. This presentation comprises a surface science approach providing an atomistic understanding of the additive action at the interface under reactive conditions with an electrochemical engineering approach providing a phenomenological characterization of the synergistic and antagonistic additive action at the interface. Our results are discussed in the light of successful fill experiments of sub-50nm Damascene structures relevant for the forthcoming 32-nm technology node.