Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 68: Semiconductor substrates: Epitaxy and growth
O 68.6: Talk
Thursday, March 25, 2010, 11:45–12:00, H42
Analysis of Anti-Phase-Domains for GaP Heteroepitaxie on Si(100) by LEEM — •Benjamin Borkenhagen1, Henning Döscher2, Gerhard Lilienkamp1, Peter Kleinschmidt2, Anja Dobrich2, Sebstian Brückner2, Ulrike Bloeck2, Thomas Hannappel2, and Winfried Daum1 — 1Institute of Energy Research and Physical Technologies, TU Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld — 2Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin
Anti-phase disorder in polar epilayers on non-polar substrates is one of the major obstacles to overcome during the growth of III-V/Si heterojunctions, e.g., for multi-stack solar cells. As a model system, thin heteroepitaxial GaP films were grown on Si(100) substrates with metal-organic vapour phase epitaxy (MOVPE). Despite the use of stepped single-domain Si(001)(2x1) substrates, the complete prevention of anti-phase domains (APD) in the GaP layer is still an unsolved problem. We have applied low energy electron microscopy (LEEM) to retrieve APDs in the main phase matrix. APDs and main phase can be distinguished by dark-field LEEM using specific diffraction spots for imaging. The results are in good agreement with TEM images of identically prepared samples. In contrast to TEM, LEEM needs no further sample preparation and allows for non-destructive investigations. A further advantage is the possibility to analyze large sample areas and find scattered defects. LEEM can also be applied to study the initial growth of such films and to inspect defect formation from the beginning.