Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 69: Symposium Polarization Field Control in Group-III-Nitrides

O 69.3: Hauptvortrag

Donnerstag, 25. März 2010, 10:30–11:00, H1

Pros and cons of green InGaN lasers on polar GaN substrates — •Uwe Strauss, Adrian Avramescu, Teresa Lermer, Jens Müller, Christoph Eichler, and Stephan Lutgen — Osram Opto Semiconductors, Leibnizstr. 4, 93055 Regensburg, Germany

One of the big challenges of InGaN lasers is the development of a device for the green spectrum. In 2009, first direct green InGaN lasers are demonstrated. The next step forward to a product will be cw operation at long wavelength > 515nm combined with wall plug efficiencies of several percent and power levels up to 50mW. However, the question about polar or non-polar orientation is still open and researchers investigate different substrates: (1) c-plane GaN: Nichia reported 515nm at 8mW cw operation on this GaN substrate, OSRAM presented R&D samples operating already at 50mW cw and 515nm. (2) Rohm published 499nm lasing on non-polar m-plane GaN. (3) Recently, Sumitomo used semi-polar substrates [20-21] to achieve 520nm lasing with 2mW of cw output power. The longest wavelengths of pulsed lasing were 526nm on c-plane (OSRAM) and 531nm on [20-21] (Sumitomo), respectively. The big advantage of c-plane is that 2 inch c-plane substrates are commercially available in high volume. The wafer size, availability and costs of semi-polar / non-polar substrates are still not clear. We will present recent results on c-plane GaN and we will discuss the advantages and disadvantages related to lasers grown on this orientation. The lasers already reached more than 2% wall plug efficiencies in cw operation at 515nm and power levels of 50mW.