Regensburg 2010 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 1: TR: Graphene 1

TT 1.10: Vortrag

Montag, 22. März 2010, 12:45–13:00, H18

Charge transport in disordered superconductor-graphene junctions — •Georgo Metalidis¹, Dmitry Golubev², and Gerd Schön¹ — ¹Institut für Theoretische Festkörperphysik, Karlsruher Institut für Technologie, D-76131 Karlsruhe, Germany — ²Institut für Nanotechnologie, Karlsruher Institut für Technologie, D-76021 Karlsruhe, Germany

We consider the charge transport through superconductor-graphene tunnel junctions, including the effect of disorder. Coherent scattering on elastic impurities in the graphene layer can give rise to multiple reflections at the graphene-superconductor interface, and can thereby increase the probability of Andreev reflection, leading to an enhancement of the subgap conductance above its classical value. Although the phenomenon is known already from heterostructures involving normal metals, we have studied how graphenes peculiar dispersion relation influences the effect.