Regensburg 2010 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 14: TR: Graphene 2
TT 14.3: Vortrag
Dienstag, 23. März 2010, 10:00–10:15, H21
Spin injection in graphene spin valve devices via thin MgO barriers — •Tsung-Yeh Yang1, Julia Samm1, Marc Drögeler1, Sebastian Blaeser1, Frank Volmer1, Mihaita Popinciuc1, Jayakumar Balakrishnan2, Ahmet Avsar2, Manu Jaiswal2, Mingang Zheng2, Bernd Beschoten1, Barbaros Oezyilmaz2, and Gernot Güntherodt1 — 1II. Physikalisches Institut, RWTH Aachen University, Templergraben 55, 52056 Aachen, Germany — 2Department of Physics, National University of Singapore, 2 Science Drive 3 Singapore 117542
We report all-electrical spin transport measurements in non-local spin valve structures on graphene at room temperature. The graphene flakes were deposited on Si/SiO2 substrates by mechanical exfoliation. The application of a back gate voltage allows for continuous control of the charge carrier type and density. Using ferromagnetic Co electrodes, efficient spin injection/detection was realized via thin MgO layers introduced between Co and graphene. Spin valve and Hanle spin precession measurements were performed for various charge carrier densities. The measurements at room temperature reveal the charge carrier mobilities of 4-5x103 cm2/Vs and spin relaxation lengths of about 3 micrometers in the metallic conduction regime. Temperature dependent measurements of the Co/MgO/graphene contacts resistances indicate that the thin MgO layers behave as tunnel barriers.
This work is supported by DFG through FOR 912.
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