Regensburg 2010 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 26: CE: Heavy Fermions

TT 26.7: Vortrag

Mittwoch, 24. März 2010, 15:45–16:00, H21

Planar cross-type junctions on microcrystals of CeCoIn₅ thin films — •Oleksandr Foyevtsov and Michael Huth — Johann Wolfgang Goethe University, Frankfurt am Main, Germany

We present results on the preparation and electrical measurements of superconductor-insulator-superconductor cross-type junctions with variable barrier strength on microcrystal isolated from CeCoin₅ thin films.

The films have been grown by molecular beam epitaxy. The morphology of the films grown by this method demonstrates a strong tendency to form microcrystals, which makes it difficult to obtain reliable tunneling contacts. Nevertheless, it is still possible to prepare such junctions with an artificial barrier on individual microcrystals.

Films were pre-patterned by optical lithography for contact pad preparation. Then, ion/electron beam induced deposition (FIBID/FEBID) techniques were used for the preparation of both, the barriers and the counter electrodes on selected microcrystals. As artificial barriers we used carbonaceous deposits prepared with FEBID. The counter electrodes prepared using FIBID from W(CO)₆ precursor, which was also previously characterized on cross-type planar junctions with aluminum counter electrode.