Regensburg 2010 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 27: CE: Poster Session
TT 27.11: Poster
Mittwoch, 24. März 2010, 14:00–18:00, Poster D1
Single crystal growth of CeNi2Ge2 using floating zone technique — •Christoph Bergmann1, H. S. Jeevan1, Christoph Geibel2, and Philipp Gegenwart1 — 1I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany — 2Max-Planck Institute for Chemical Physics of Solids, D-01187 Dresden, Germany
CeNi2Ge2 is a well-known paramagnetic moderate heavy fermion compound with the electronic specific heat γ ≈ 350 mJ/K2mol. It shows pronounced non-Fermi liquid behavior, which could be related to a nearby anti-ferromagnetic quantum critical point. Similar to its homologue compound CeCu2Si2, CeNi2Ge2 displays a strong sensitive of its low-temperature physical properties to tiny changes in the composition in its physical properties, possibly due to site interchange of Ni and Ge. Aiming to determine the fermi surface, we have grown single crystals of CeNi2Ge2 using a floating-zone technique. We prepare the feed rod of CeNi2Ge2 using induction melting or arc melting methods. With these methods we got good quality of single crystals and try to increase the residual resistivity ratio by varying the initial composition. Here we will discuss the relation between the single crystal growth conditions for our floating zone technique, the initial composition and the properties of the obtained single crystal especially their residual resistivity ratio. Additionally we have grown and investigated a crystal with 20% Pd doping to get an anti-ferromagnetic ground state.
Work supported by DFG through SFB 602 and research unit "Quantum phase transitions".