Regensburg 2010 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 27: CE: Poster Session

TT 27.18: Poster

Wednesday, March 24, 2010, 14:00–18:00, Poster D1

In situ preparation of CeIn₃ thin films by co-sputtering — •Alexander Zaitsev¹, Andre Beck¹, Rainer Fromknecht¹, Markus Wissinger¹, Rudolf Schneider¹, Jochen Geerk¹, and Hilbert v. Löhneysen^1,2 — ¹Karlsruher Institut für Technologie, Institut für Festkörperphysik, 76021 Karlsruhe — ²Karlsruher Institut für Technologie, Physikalisches Institut, 76131 Karlsruhe

Thin films of the heavy fermion material CeIn₃ were prepared in situ on 10x30 mm² r-cut sapphire substrates by simultaneous dc sputtering of two stoichiometric CeIn₃ targets and dc sputtering of a pure In target in argon gas. The sputtering power of 40 W at each CeIn₃ target and 400 W at the In target allowed the deposition of ∼0.5 µm thick CeIn₃ films within 40 seconds on the substrate held at 500-550 ^∘C. The resultant films were continuous, smooth and stoichiometric as measured by EDX, although sparse In outgrowths of ∼1 µm size were also observed. According to XRD analysis the films were predominatly (111) oriented, with minor amount of (100) and (110) oriented phases. The dependence of the electrical resistivty on temperature was typically that of bulk CeIn₃ with a clear maximum at around 50 K, followed by a linear decrease of resistivity towards lower temperatures. At 10 K a kink in ρ(T) indicated the antiferromagnetic ordering of CeIn₃. The residual resistivity ratio ρ(50K)/ρ(1.4K) = 3 was reasonably high for the textured thin film material.