Regensburg 2010 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 3: TR: Fluctuations and Noise

TT 3.5: Talk

Monday, March 22, 2010, 11:15–11:30, H20

Noise conductance of carbon nanotube transistors — Julien Chaste¹, Emiliano Pallecchi¹, Pascal Morfin¹, Gwendal Fève¹, Takis Kontos¹, Jean-Marc Berroir¹, Pertti Hakonen², and •Bernard Plaçais¹ — ¹Ecole Normale Superieure, Laboratoire Pierre Aigrain, 24 rue Lhomond 75005 Paris, France — ²Helsinki University of Technology, Low Temperature laboratory, Espoo, Finland

The presentation deals with radio-frequency noise and transmission measurements of high-gain single wall carbon nanotube transistors at cryogenic temperatures [1]. The gate capacitance, drain conductance, transconductance and current-noise are analyzed by relying on a ballistic 1-dimensional scattering model whose parameter is the channel quantum capacitance that controls gate coupling. At 4 Kelvin, current and noise are thermally activated. The bias-dependent electronic temperature can be measured from the gate voltage dependence of transconductance. A "noise conductance" can be then deduced which is found to obey a simple law as function of drain conductance and transconductance as predicted by the 1D model. Finally we estimate the charge resolution of nanotube devices for applications as fast single-shot electron detectors.

[1] J. Chaste, E. Pallecchi, P. Morfin, G. Fève, T. Kontos, J.-M. Berroir, P. Hakonen, B. Plaçais, submitted (2009).