Regensburg 2010 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 33: TR: Nanoelectronics I: Quantum Dots, Wires, Point Contacts 2

TT 33.13: Vortrag

Donnerstag, 25. März 2010, 17:15–17:30, H19

Spin Relaxation in Silicon based Quantum dots — •Martin Raith¹, Peter Stano², and Jaroslav Fabian¹ — ¹Institute for Theoretical Physics, University of Regensburg, 93053 Regensburg, Germany — ²Institute of Physics, Slovak Academy of Sciences, 84511 Bratislava, Slovak Republik

Recent progress in manufacturing top-gated quantum dots based on Si/SiGe or Si/SiO₂ systems emphasized the importance of silicon as a possible host material for the creation of spin qubit arrays and the associated idea proposed by Loss and DiVincenzo (1998) for the realization of a quantum computer. Silicon is of special interest because of its small spin-orbit coupling and the availability of isotopes with zero nuclear spin. Therefore silicon based quantum dots imply long spin lifetimes and yield promising candidates for quantum information processing. We provide quantitative results of the characteristic energies in the presence of spin-orbit coupling and phonon-induced spin relaxation times for realistic silicon based single and double dot systems using analytical models and numerical methods. This work is supported by the DFG SPP 1285.