Regensburg 2010 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 35: TR: Nanoelectronics III: Molecular Electronics 1
TT 35.14: Vortrag
Donnerstag, 25. März 2010, 17:30–17:45, H21
The dark side of benzene: interference vs. interaction — Dan Bohr1 and •Peter Schmitteckert2 — 1Department of Physics, University of Basel, Switzerland — 2Institut für Nanotechnologie, Karlsruher Institut für Technologie (KIT), Germany
We present the study of the linear conductance vs. applied gate voltage for an interacting six site ring structure, which is threaded by a flux of π and coupled to a left and a right lead. This ring structure is designed to have a vanishing conductance for all gate voltages and temperatures provided interactions are ignored. Therefore this system is an ideal testbed to study the interplay of interaction and interference. First we find a Kondo type resonance for rather large hopping parameter. Second, we find additional resonance peaks which can be explained by a population blocking mechanism. To this end we have to extend the Kubo approach within the Density Matrix Renormalization Group method to handle degenerate states.