Regensburg 2010 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 36: TR: Poster Session
TT 36.17: Poster
Donnerstag, 25. März 2010, 14:00–18:00, Poster A
Electrical contacting of vertical nanostructures — •Matthias Wieser1, Jochen Grebing1, Marcel Höwler1, Kerstin Bernert1, Artur Erbe1, Jürgen Fassbender1, and Bertram Schmidt2 — 1Forschungszentrum Dresden-Rossendorf e. V., D-01328 Dresden — 2Otto-von-Guericke-Universität Magdeburg, D-39106 Magdeburg
The aim of this new approach is the contacting and characterization of small vertical nanostructures. Therefore, in contrast to conventional lateral contacting a vertical pillar with a height of about 70nm and an elliptic size of 100nm × 150nm is contacted using a bottom electrode, a via with the same height as the pillar and two top electrodes for tip-contacting of measurement devices. The structuring of the different layers is done using electron beam lithography (EBL). A resist layer is used as an insulator between the bottom and the top electrodes. In the center of the pillar an Al2O3 tunnel barrier will be integrated. The current voltage (IV) characteristics of the system will be investigated and compared to the direct tunneling and the Fowler-Nordheim tunneling model. Using this technique we will characterize the electrical properties of oxides with varying thickness.