Regensburg 2010 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 37: MLT: Poster Session
TT 37.30: Poster
Thursday, March 25, 2010, 14:00–18:00, Poster A
Ballistic transport and counting statistics on disordered graphene — •Alexander Schüssler1, Mikhail Titov2,3, Pavel M. Ostrovsky1, Igor V. Gornyi1,2, and Alexander D. Mirlin1,2,4 — 1Institut für Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany — 2DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany — 3School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, UK — 4Institut für Theorie der kondensierten Materie, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany
The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. We develop two analytical approaches based on the scattering theory and on the Green function formalism, respectively. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e2/2π h per resonant impurity. Our results are fully supported by numerical simulations. We further analyze the crossover to the diffusive behavior with increasing system length and calculate the counting statistics in the latter regime for the case of random potential that does not mix two graphene valleys.
[1] M. Titov et al arXiv: 0908.3793