Regensburg 2010 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 40: TR: Nanoelectronics III: Molecular Electronics 2
TT 40.1: Invited Talk
Friday, March 26, 2010, 10:15–10:45, H20
Heating, Heat Conduction and Cooling in Molecular Junctions — •Abraham Nitzan1, Michael Galperin2, and Keiji Saito3 — 1School of Chemistry, Tel Aviv University, Tel Aviv 69978, Israel — 2Department of Chemistry, University of California, La Jolla, CA, 92093, USA — 3Graduate School of Science, University of Tokyo, 113-0033, Japan
Heating in molecular conduction junction depends on the balance between the rate of heat deposit by the electronic current and the efficiency of heat conduction away from the junction. I will review our recent work on such processes, then focus on models for current induced cooling in such systems.