Dresden 2011 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 3: Dielectric and ferroelectric thin films 2
DF 3.4: Talk
Monday, March 14, 2011, 16:10–16:30, MÜL Elch
Electroresistance effects in ultrathin ferroelectric barriers — •Daniel Pantel, Silvana Goetze, Dietrich Hesse, and Marin Alexe — Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, Halle (Saale)
Electron transport through ultrathin, fully depleted ferroelectric barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated by simulation and experiment.
In our calculations, we assume a polarization direction dependent ferroelectric barrier and include various transport mechanisms, namely direct tunneling, Fowler-Nordheim tunneling and thermionic injection. Electroresistance is found for all three transport mechanisms. Large electroresistance is favored in thicker films (on the expense of current density) or by switching between two transport mechanisms, e.g. direct tunneling and Fowler-Nordheim tunneling, by polarization switching.
Furthermore, we show some experimental results on PbZr0.2Ti0.8O3 / La0.7Sr0.3MnO3 heterostructures grown on SrTiO3 substrates with nanoscale elemental metal top-electrodes. We find that the polarization direction influences the transport at room temperature.