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DS: Fachverband Dünne Schichten

DS 12: Layer Deposition Processes

DS 12.2: Vortrag

Montag, 14. März 2011, 17:30–17:45, GER 38

Atomic layer deposition of TiO₂ — •Massimo Tallarida, Nils Deßmann, Matthias Städter, Daniel Friedrich, Marcel Michling, and Dieter Schmeißer — BTU-Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany

We present a study of the initial growth of TiO₂ on Si(111) by atomic layer deposition (ALD). The Si substrate was etched with NH₄F before ALD to remove the native oxide film and to produce a Si-H termination. In−situ experiments by means of photoemission and X-ray absorption spectroscopy were conducted with synchrotron radiation on Ti-oxide films produced using Ti-tetra-iso-propoxide (TTIP) and water as precursors. O1s, Ti2p, C1s, and Si2p core level, and O1s and Ti2p absorption edges show the transition of the Ti-oxide properties during the first layers. The growth starts with a very small growth rate (0.03nm/cycle) due to the growth inhibition of the Si-H termination and proceeds with higher growth rate (0.1nm/cycle) after 1.5nm Ti-oxide has been deposited.