DS 12: Layer Deposition Processes
Montag, 14. März 2011, 17:15–18:30, GER 38
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17:15 |
DS 12.1 |
A growth model for the HfO2 ALD process — •Marcel Michling, Massimo Tallarida, Krzysztof Kolanek, and Dieter Schmeißer
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17:30 |
DS 12.2 |
Atomic layer deposition of TiO2 — •Massimo Tallarida, Nils Deßmann, Matthias Städter, Daniel Friedrich, Marcel Michling, and Dieter Schmeißer
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17:45 |
DS 12.3 |
Deposition and growth of antibacterial Ti-Cu films — •Vitezslav Stranak, Harm Wulff, Steffen Drache, Robert Bogdanowicz, Zdenek Hubicka, Carmen Zietz, Kathleen Arndt, Rainer Bader, Andreas Podbielski, and Rainer Hippler
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18:00 |
DS 12.4 |
Combination of ECR plasma and asymmetric bipolar pulsed bias voltage for deposition of hard a-C:H films — •Marcus Günther, Siegfried Peter, and Frank Richter
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18:15 |
DS 12.5 |
Electrical and structural properties of magnetron sputtered hydrogenated amorphous Silicon films — •Frank Nobis, Hartmut Kupfer, Evelyn Breyer, Philipp Schäfer, Dietrich R. T. Zahn, and Frank Richter
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