Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Application of Thin Films
DS 20.1: Talk
Tuesday, March 15, 2011, 10:15–10:30, GER 38
Thin isolators consisting of aluminum oxide and self-assembled monolayers for tunnel diodes — •Andreas Hochmeister1, Mario Bareiss1, Ute Zschieschang2, Hagen Klauk2, Bernhard Fabel1, Giuseppe Scarpa1, and Paolo Lugli1 — 1Institute for Nanoelectronics, TU München — 2Max Planck Institute for Solid State Research, Stuttgart
We present a fabrication method and results of the electrical characterization of metal-oxide-metal (MOM) tunnel diodes. Two different materials (aluminum and gold) were used as metals to produce an asymmetric diode, which can act as a rectifier, e.g. for infrared antenna applications. First an aluminum line was evaporated on a SiO2/Si substrate through a shadow mask. The dielectric (aluminum oxide) was produced by oxidation using a RIE treatment; the diode was completed by a second evaporation step of gold lines perpendicular to the aluminum line. Gold pads were used for having a better contact during electrical characterization. We could show that by adding a layer of phosphonic acid self-assembled monolayer (SAM) on the isolating aluminum oxide film before the gold evaporation, the effective thickness of the insulator could be tailored. The thickness of the aluminum oxide is approximately 3nm, which could be controlled to 4-6 nm by the additional layer of SAM. Electrical characterization was performed by dc I-V measurements. At high electric fields Fowler-Nordheim tunneling and dielectric breakdown was observed.