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DS: Fachverband Dünne Schichten

DS 21: High-k and Low-k Dielectrics (jointly with DF)

DS 21.2: Vortrag

Dienstag, 15. März 2011, 14:00–14:15, GER 38

Improvement of dielectric properties of Sr_xZr_(1−x)O_y grown by Molecular Beam Deposition and Sputtering — •Matthias Grube¹, Dominik Martin¹, Walter M. Weber¹, Thomas Mikolajick^1,2, Lutz Geelhaar³, and Henning Riechert³ — ¹Namlab gGmbH, 01187 Dresden — ²Lehrstuhl für Nanoelektronische Materialien, TU Dresden, 01062 Dresden — ³Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin

Following the demand of replacing conventional dielectrics in the semiconductor industry, a material screening for new high-k dielectrics with nanometer-scale thicknesses is required. Among the many investigated potential materials are ZrO₂ as well as laminates and mixtures of ZrO₂ with HfO₂, Ta₂O₅ and Al₂O₃. We concentrated our efforts to the growth and characterisation of ZrO₂ with the admixture of SrO to form Sr_xZr_(1−x)O_y. We employed the molecular beam deposition technique (MBD) in a co-deposition regime for this purpose. The capability of MBD for high-k material screening was verified by comparison to deposition via sputtering a stoichiometric SrZrO₃ target. The investigated test structures were metal-insulator-metal capacitors (MIM) with a TiN bottom electrode on n⁺⁺-Si substrates. I-V and C-V measurements revealed a k-value of 19 for amorphous Sr_xZr_(1−x)O_y grown by either MBD or sputtering. After surpassing a crystallisation temperature of approximately 650^∘C the k-value increases to 30 while the dielectric changes into a polycrystalline film with a cubic phase. A comparison of MBD and sputtering of ZrO₂ and Sr_xZr_(1−x)O_y will be presented in detail.