Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 21: High-k and Low-k Dielectrics (jointly with DF)
DS 21.6: Talk
Tuesday, March 15, 2011, 15:00–15:15, GER 38
Post-etch cleaning mechanisms at ultra low k surfaces — •Roman Leitsmann1, Oliver Böhm1,2, Philipp Plänitz1, Christian Radehaus1, Michael Schreiber2, and Matthias Schaller3 — 1GWT-TUD GmbH, Material Calculations, Chemnitz, Germany — 2Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz — 3Globalfoundries Dresden Module Two GmbH & Co. KG, Germany
The usage of materials with an ultra low dielectric constant is necessary due to the decreasing feature size of integrated circuits, which results in smaller distances between the conduction layers, and hence to an increasing resistance capacitance delay. However, the application of such ultra low k (ULK) materials is connected to several problems. For example a fluorocarbon film at the ULK-surfaces at the sidewalls of trenches or vias is formed during the etch process. To remove this film a post-etch cleaning procedure have to be applied. In this study we investigate the cleaning efficiency of diluted HF using state of the art density functional theory. In particular different desorption mechanisms of CF-polymer fragments will be discussed in detail.