DS 21: High-k and Low-k Dielectrics (jointly with DF)
Tuesday, March 15, 2011, 13:45–15:15, GER 38
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13:45 |
DS 21.1 |
Nondestructive Hard X-ray Photoelectron Spetroscopy Study of Resistive Switching TiN/Ti/HfO2/TiN RRAM Cells — •Małgorzata Sowińska, Sebastian Thiess, Christian Walczyk, Damian Walczyk, Christian Wenger, Mindaugas Lukosius, Wolfgang Drube, and Thomas Schroeder
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14:00 |
DS 21.2 |
Improvement of dielectric properties of SrxZr(1−x)Oy grown by Molecular Beam Deposition and Sputtering — •Matthias Grube, Dominik Martin, Walter M. Weber, Thomas Mikolajick, Lutz Geelhaar, and Henning Riechert
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14:15 |
DS 21.3 |
Phase equilibria at Si-HfO2 and Pt-HfO2 interfaces from first principles thermodynamics — •Rampi Ramprasad and Hong Zhu
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14:30 |
DS 21.4 |
Bottom-up Modeling of the Elastic Properties of Organosilicate Glasses and their Relation to Composition and Network Defects — •Jan M. Knaup, Han Li, Joost J. Vlassak, and Efthimios Kaxiras
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14:45 |
DS 21.5 |
Local I-V characteristics of high-k ultra-thin ZrO2- and ZrO2/Al2O3/ZrO2-films. — •Dominik Martin, Matthias Grube, Elke Erben, Johannes Müller, Wenke Weinreich, Uwe Schroeder, Lutz Geelhaar, Walter Weber, Thomas Mikolajick, and Henning Riechert
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15:00 |
DS 21.6 |
Post-etch cleaning mechanisms at ultra low k surfaces — •Roman Leitsmann, Oliver Böhm, Philipp Plänitz, Christian Radehaus, Michael Schreiber, and Matthias Schaller
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