Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 40: Organic Electronics and Photovoltaics HL-II (jointly with CPP, HL, and O)
DS 40.12: Talk
Wednesday, March 16, 2011, 13:15–13:30, FOE Anorg
Charge transport measurements by transient techniques and their detailed evaluation — •Jens Lorrmann1, David Vocke1, Carsten Deibel1, and Vladimir Dyakonov1,2 — 1Experimental Physics VI, Physical Institute, Julius-Maximilian-University of Würzburg — 2Bavarian Center for Applied Energy Research e.V. (ZAE Bayern e.V.), Würzburg
The charge carrier transport in pristine poly(3-hexyl thiophene-2,5-diyl) (P3HT) of different regioregularities and in blends with [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) was investigated by time-of-flight measurements (TOF). We investigate the field and temperature dependence of hole and electron mobilities down to temperatures of 130 K in order to understand the effects of the transport on the solar cell efficiency. The results from the TOF measurements are compared with the outcome of complementary methods like charge extraction by linearly increasing voltage (CELIV) and field effect transistor measurements. We calculate the disorder parameters from the temperature and field dependencies of the
charge mobility using a Gaussian disorder transport formalism. Furthermore, we present the detail evaluation of TOF current transients with an improved method by Scott et al. [1], which provides explicit distributions of the transit times and the mobilities instead of discrete values.
[1] J.C. Scott, L.T. Pautmeier and L.B. Schein, Mean mobilities of charge carriers in disordered media, Phys. Rev. B 46:8603, 1992