Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 41: Organic Electronics and Photovoltaics HL-III (jointly with CPP, HL, and O)
DS 41.4: Vortrag
Mittwoch, 16. März 2011, 18:45–19:00, FOE Anorg
Ambipolar organic field-effect devices using an aliphatic passivation layer — Michael Kraus, Matthias Horlet, Simon Haug, Stefan Richler, Wolfgang Brütting, and •Andreas Opitz — Institute of Physics, University of Augsburg, 86135 Augsburg, Germany
In recent years electron and hole transport has been found to be an intrinsic feature for many organic semiconductors. The charge carrier type depends thereby on the injecting electrodes and the presence of interface traps.
In this contribution we demonstrate the application of the insulating long-chain alkane C44H90 tetratetracontane (TTC) as passivation layer, which has been shown to be highly suitable for the elimination of electron traps [1]. The analysis of its growth behaviour on silicon dioxide and of the subsequently deposited organic semiconductor will be shown for different molecular semiconductors like copper-phthalocyanine and diindenoperylene. The charge carrier transport in these semiconductor layers was analysed using top contact organic field-effect transistors. Thereby an asymmetry between electron and hole mobilities was found with diindenoperylene showing the better electron transport whereas copper-phthalocyanine has balanced mobilities at room temperature. The growth of the phthalocyanine gives crystalline needles up to 500 nm in length which improves the transport properties.
[1] M. Kraus et al., J. Appl. Phys. 107, 094503 (2010).