Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 41: Organic Electronics and Photovoltaics HL-III (jointly with CPP, HL, and O)
DS 41.6: Vortrag
Mittwoch, 16. März 2011, 19:15–19:30, FOE Anorg
the origin of the short channel effect in organic field effect transistor. — •Ali Veysel Tunc1, Elizabeth von Hauff1, Ahmet Lütfi Ugur2, Ali Erdogmus2, and Jurgen Parisi1 — 1University of Oldenburg, Department of Physics, Energy and Semiconductor Research Laboratory (EHF) Carl-von-Ossietzky Str.9-11, 26129 Oldenburg, Germany — 2Yildiz Technical University, Department of Chemistry, Davutpasa Campus, 34210 Esenler, Istanbul, Turkey
The origin of the short channel effect in polymer-based field effect transistors (FETs) was investigated. Here, we employed three different molecular weight poly [2-methoxy,5-(3’,7’-dimethyl-octyloxy)]-p-phenylene vinylene (MDMO-PPV) and in blends with different ratios of 1-(3-methoxycarbonyl) propyl-1-phenyl[6,6]C61 (PCBM). In this work we demonstrate that the short channel effect is not only influenced by the device geometry but there is also a correlation between intrinsic material properties, the hole current, field effect mobility, contact resistance and short channel behavior in PPV based OFETs. Intrinsic properties, mobility or molecular weight, of the semiconductor influence the onset of the short channel effect. We observed that increasing the PCBM content in the blend leads to an increase in the hole current and field effect mobility, a decrease in the contact resistance, as well as a deviation from the saturation behavior of the output characteristics of the FET. This effect is attributed to a change in the polymer chain ordering in the source channel which in turn influences the charge transport properties in the polymer film.