Dresden 2011 – scientific programme

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.107: Poster

Wednesday, March 16, 2011, 15:00–17:30, P1

The Influence of Oxygen on the Potential Distribution of Operating Zinc Oxide FETs — •Daniel Walker — TU Darmstadt, FB Materialwissenschaften, FG Elektronische Materialeigenschaften, Petersenstr 23, 64287 Darmstadt

Zinc Oxide has been studied extensively over the past 40 years and remains a material of interest for many applications including flexible electronics due to its n-type semi-conducting properties, printability from solution, transparency and wide band gap. One well known factor that has to be mitigated before commercial ZnO based electronics can be implemented is its very strong sensitivity to oxygen. This work discusses the effects of oxygen on the surface potential of an operating transistor with a highly granular ZnO film, fabricated by spin coating from solution. An ultra high vacuum Scanning Kelvin Force Microscope is used to examine at which parts of the device oxygen alters the potential distribution along the channel. It is shown that the oxygen strongly influences the behaviour of the device at the source and drain contacts and these effects are then interpreted in a qualitative model depicting the mode of operation of the transistor. The results are then related back to the conventional current-voltage characteristics.