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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.123: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Admittance spectroscopy to characterize interface traps in MOS structures containing high-k materials — •Markus Hippler¹, Jan Lehmann¹, Varun John¹, Wolfgang Skorupa¹, Manfred Helm¹, Heidemarie Schmidt¹, Marcelo Lopes², Jürgen Schubert², and Siegfried Mantl² — ¹Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01314 Dresden — ²PGI-9 and JARAFIT, Research Centre Jülich, 52425 Jülich

Today`s planar metal-oxide-semiconductor field-effect transistor (MOSFET) technology with silicon dioxide (SiO2) as the gate dielectric has reached its limit of scaling, because the leakage currents through 1nm SiO2 are unacceptable. For an ongoing down-scaling process, the gate dielectric has to be exchanged by a material with a higher relative dielectric constant k. Two of those candidates are lanthanum lutetium oxide (LLO) and lanthanum scandate oxide (LSO) with relative dielectric constants of k(LSO)=24 and k(LLO)=32, respectively. Here we characterize the properties of the interface traps, i.e. the trap density and time constant of MOS diodes based on those materials by admittance spectroscopy. For this purpose 6 and 20nm thick layers of LLO and LSO layers have been grown by molecular beam deposition (MBD) on RCA-cleaned p-Si.The admittance measurements were performed in the frequency range from 50 Hz to 20 kHz with an AC test bias amplitude of 10mV under variation of the DC ground voltage. Measured data have been analyzed by a numerical fitting program with respect to the serial resistance Rs and oxide capacitance Cox.