Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.124: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Ab initio study of the silylation mechanism of OH-groups with different Silazanes — •Oliver Böhm1,2, Roman Leitsmann1, Philipp Plänitz1, Christian Radehaus1, Michael Schreiber2, and Matthias Schaller3 — 1GWT-TUD GmbH, Material Calculations, Chemnitz, Germany — 2Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz — 3Globalfoundries Dresden Module Two GmbH & Co. KG, Germany
The decreasing feature size of integrated circuits results in a smaller distance between the conduction layers, which is accompanied by an increasing resistance capacitance delay. Therefore, the usage of materials with an ultra low dielectric constant is necessary. However, the application of such ultra low k (ULK) materials is connected to several problems, like the formation of OH-groups after the etch process. This results in moisture uptake and a strongly increasing dielectric constant. To restore the k-value, a post-etch treatment is necessary. In this study we investigate the silylation of OH-groups with different silazanes. In particular we use density functional theory to study the different reaction mechanisms. For the silylation reaction of Hexamethyldisilazane (HMDS) and Trimethylaminosilane (TMAS) with Silanol, the minimum energy paths as well as the transition states are discussed in detail.