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Dresden 2011 – scientific programme

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.125: Poster

Wednesday, March 16, 2011, 15:00–17:30, P1

Thermal stability of BaSrO thin films and the influence of Al intermediate layers to the electrical properties of high-k Si(001)/BaSrO/Au MOS diodes — •Shariful Islam1, Dirk Müller-Sajak1, Alexandr Cosceev2, Herbert Pfnür1, and Karl R. Hofmann21Leibniz-Universität Hannover, Inst. f. Festkörperphysik — 2Leibniz-Universität Hannover, Bauelemente der Mikro- und Nanoelektronik

MOS diodes with crystalline Ba0.7Sr0.3O gate oxide and Au gate metal on n- and p-Si(001) were produced, which have a dielectric constant of єr≈28. The oxides were grown on structured Si(001) in a UHV chamber by MBE in oxygen ambient conditions and capped with 100nm Au for ex-situ electrical measurements. I-V measurements show low leakage currents compared to SiO2 with the same EOT. From C-V measurements we extracted with the Terman method a density of interface states, Dit, of only ≈1010eV−1cm−2.
We tested the thermal stability of these oxides and investigated them with X-Ray Photoelectron Spectroscopy (XPS). They are fully stable up to 450C but convert to other chemical species, most likely silicates, at higher temperatures. But even at 700C no formation of SiO2 at the interface to Si was detectable.
To improve the adhesion between the Au gate metal and the oxide we evaporated a thin layer of Al at the Au/oxide interface. This causes a thickness dependent shift of the flatband voltage. We will present our XPS measurements of the chemical origin of this shift.

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