Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.15: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Dependence of Field-Effect Mobility on Semiconductor Layer Thickness in Organic Thin Film Transistors — •Christopher Keil and Schlettwein Derck — Institute of Applied Physics, Justus-Liebig-University Giessen, Germany. email:schlettwein@uni-giessen.de

Thin films of F₁₆PcCu from the monolayer regime to thicker nm range were prepared under high vacuum conditions. As substrate a SiO₂ insulating layer was chosen. Metal contacts were evaporated as bottom contacts before the organic layer deposition. Organic thin film transistors of the molecular semiconductors were thereby achieved. Electrical conductivity as well as field-effect mobility were studied to investigate the role of the interface between the semiconductor and the gate insulator in bottom-gate field-effect transistors. The influence of organic film thickness as well as contact resistance between metal electrode and semiconductor layer were discussed to calculate the respective field effect mobility.