Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.17: Poster
Wednesday, March 16, 2011, 15:00–17:30, P1
Organic field effect transistors on thin polyurethane films as gate dielectric — •Steffen Heuser, Jan Hartel, Christopher Keil, and Derck Schlettwein — Institute of Applied Physics, Justus-Liebig-University Giessen, Germany. email:schlettwein@uni-giessen.de
Thin insulating polymer layers (1 – 2.5 µm) of a two-component polyurethane resin were deposited by spin-coating as gate dielectric on a Pt gate electrode on poly(ethyleneterephthalate) PET. An interdigitated source and drain electrode array of gold was prepared to complete the setting of the measurement. Such structures with polymeric gate dielectrics are of interest to realize all-organic field effect transistors (OFET). In this study, 20 nm thin films of a perfluorinated phthalocyanine F16PcCu were prepared by physical vapour deposition (PVD) under fine vacuum conditions as an organic n-type semiconductor. The dielectric properties of the polymer insulating layer were determined by impedance spectroscopy. The transistor structures were measured and as characteristic properties the charge carrier mobility in the F16PcCu film, the threshold voltage and the on/off current ratio of the structures will be discussed.