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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.20: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Vertical Organic n-Triodes based on Me-PTCDI and fullerenes — •Axel Fischer, René Michel, Philipp Sebastian, Hans Kleemann, Alexander Zakhidov, Björn Lüssem, and Karl Leo — Institut für Angewandte Photophysik, George-Bähr-Straße 1, 01067 Dresden, Germany

Vertical Organic Triodes (VOT) are promising three terminal transistor devices, which, in contrast to organic field effect transistors (OFETs), can be processed in a vertical structure.

The major advantage of the vertical structure is the possibility to stack them with a second electronic device. For example, VOTs can be combined with an organic memory device to form an active matrix crossbar with the VOT as selection transistor. Due to stacking of the two devices, a high integration density can be achieved.

Furthermore, VOTs exhibit short active lengths which can be precisely controlled by the active layer thickness. Thus, these devices can drive high currents and high switching frequencies are in reach. Although considerable effort has been spent into the research of these devices, a detailed understanding of the working principles of these devices is still missing.

In this contribution, we will introduce the device concept of the VOT and discuss different electronic configurations. We will show organic triodes which are able to drive high current densities. Based on our results, we suggest that the working principle of the device is based on a permeable metal grid.