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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.4: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Selective surface modification of silicon oxide by OTS — •Christian Belgardt¹, Thomas Baumgärtel¹, Thomas Blaudeck², Harald Graaf¹, Reinhard R. Baumann², and Christian von Borczyskowski¹ — ¹Center for Nanostructured Materials and Analytics (nanoMA), Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany — ²Institute for Print and Media Technology (pmTUC), Chemnitz University of Technology, 09107 Chemnitz, Germany

The key material of electronics is silicon oxide. The chemical modification of its surfaces by self-assembled monolayers (SAMs) is a well-known method to control their physico-chemical properties. SAMs are typically formed by chemical reaction of the constituting molecules with the surface. The common process to prepare highly ordered monolayers is a chemical bath of a silane solution e.g. octadecyltrichlorosilane (OTS).

We report on hydrophobic OTS monolayers formed by standard method from chemical bath and by ink-jet printing which is known as a purely additive dynamic method and scalable technology. Our results indicate that a structured hydrophobization of the silicon oxide surface by inkjet printing is possible using OTS diluted in toluene at millimolar concentrations. The SAM formation is seems to be governed by an evaporation-driven self-assembly of the OTS molecules on the surface.