Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.57b: Poster
Wednesday, March 16, 2011, 15:00–17:30, P1
High quality graphene layers on commercial available 3C-SiC(001)/Si wafers — •V.Yu. Aristov2,3, G. Urbanik1, K. Kummer3, D.V. Vyalikh3, O.V. Molodtsova3, A.B. Preobrajenski4, A.A. Zakharov4, C. Hess1, T. Haenke1, B. Buechner1, I. Vobornik5, J. Fujii5, G. Panaccione5, Yu.A. Ossipyan2, and M. Knupfer1 — 1IFW Dresden, Postfach 270116, D-01171 Dresden, Germany — 2ISSP, Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russia — 3IFP, TU Dresden, D-01069 Dresden, Germany — 4MAX-lab Uni Lund, Lund, Sweden — 5TASC NL INFM-CNR, Trieste, Italy
The development of graphene-based technologies requires an economical fabrication method compatible with mass-production. Here we demonstrate the feasibility of graphene synthesis on commercially available cubic SiC(001) substrates of > 300 mm in diameter, which result in graphene flakes electronically decoupled from the substrate [1]. The quality of graphene overlayers was characterized by a number of experimental techniques indicating very weak interaction with the substrate. After optimization of preparation procedure the proposed synthesis method can represent a further big step towards graphene-based electronic technologies.
Acknowledgements. This work was supported by the HZB (BESSYII), the DFG under grant KN393/14, and by the RFBR under grant 10-02-00269. We are grateful to T. Chassagne, M. Zielinski and M. Portail (CRHEA-CNRS, Sophia Antipolis, France) for providing high quality β-SiC(100) thin film samples.
[1] V.Yu. Aristov et al., Nano Letters 10, 992 (2010).