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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.65: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Reflectivity characterization of silicon ion-implanted PMMA for device application at 1.55 μm — •Bojana Florian¹, Ivan Stefanov², and Georgi Hadjichristov³ — ¹Bulgarian Institute of Metrology, 2 Prof. P. Mutafchiev Str., 1797 Sofia, Bulgaria — ²Dept.of Quantum Electronics, Faculty of Physics, Sofia University, 5 James Bourchier Blvd., 1164 Sofia, Bulgaria — ³Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Silicon ion-implanted poly(methyl methacrylate) (PMMA) ultrathin layers of thickness of 100 nm buried in a depth of 100 nm were characterized by means of their near-IR reflectivity. As a case of photonic application for an integrated optics purpose (in optical devices operating at the telecommunications wavelength of 1.55 μm), we will present here an ultrathin reflective-type beam splitter/coupler with a low absorption loss. Such an optical element was examined upon illumination with the output of a 1.55 μm CW laser source coupled to an optic fiber.

Specular reflectance-to-transmission ratio (R/T) of PMMA plates implanted with Si+ ions at an energy of 50 keV and ion fluence in the range from 10^14 to 10^17 cm^2 were analyzed as a function of the ion-implant fluence, as well as the angle of incidence, polarization and the power of incident laser beam. Diffuse reflectivity of the layers at 1.55 μm was also carefuly measured. The nanoclustered structure of the carbonaceous subsurface ion-implanted layer enhances R/T [1].

[1] G.B. Hadjichristov, I.L. Stefanov, Appl. Opt. 49 (2010) 1876.

Work supported by grants #FNI 098/2010 of the Sofia University and #DRNF 02/8-2009 of the National Science Fund of Bulgaria.