Dresden 2011 – scientific programme

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.70: Poster

Wednesday, March 16, 2011, 15:00–17:30, P1

PCMO thin film for resistive switching devices — •Anja Herpers, Chanwoo Park, Tobias Menke, Rainer Bruchhaus, Regina Dittmann, and Rainer Waser — Peter Gruenberg Institute (PGI-7), Electronic Materials, Forschungszentrum Juelich, 52425 Juelich, Germany

In many transition metal oxides the electrical resistance can be changed between two defined values by applying an electrical field. This effect can be used in resistive random access memories for non-volatile data storage.

In this work the material Pr_0.48Ca_0.52MnO₃ (PCMO) as perovskite oxide and its interface to titanium and platinum is investigated. For the thin film preparation RHEED-assisted pulsed laser deposition is used. The material is epitaxially grown on SrTiO₃ substrates and SrRuO₃ films under different conditions. The deposition parameters have been optimized in regard of RHEED pattern (50 unit cell layers visible), surface roughness down to 2Å by AFM and crystal quality using XRD (FWHM of rocking curve down to 0.034^∘). We will compare devices having interfaces to metals with different work functions, as it is considered in literature that the Schottky barrier is changed during switching. We will present the corresponding I-V-curves and switching results.