Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.73: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Deep Trap Analysis using QTS and DLTS on Schottky Diodes with Gold Implanted Silicon — •Markus Arnold, Axel Fechner, Susann Müller, and Dietrich R.T. Zahn — Chemnitz University of Technology, Semiconductor Physics, 09107 Chemnitz, Germany

Charge transient spectroscopy (QTS) and deep-level transient spectroscopy (DLTS) measurements of Silicon Schottky diodes are presented revealing the influence of gold implantation into n-doped silicon on the charge carrier transport and trapping properties.

Charge transient spectroscopy (QTS) developed originally by Kirov et al. [1] is an electrical measurement method related to deep-level transient spectroscopy (DLTS) developed originally by Lang et al. [2]. Especially using QTS it is possible to measure high ohmic structures like Metal-Oxide-Semiconductor (MOS) capacitors with a high sensitivity. Due to the leakage current in the reverse bias region of Schottky diodes it is very challenging to measure QTS. So the results obtained using QTS are compared to current-voltage, capacitance-voltage, and DLTS measurements on the same samples. The compatibility of these techniques and their differences are discussed.

[1] K. I. Kirov, K.B. Radev, Phys. Stat. Sol. (a) 63 (1981) 711

[2] D. V. Lang, J. Appl. Phys. 45 (1974) 3023